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US 2004/0070890 A1Published application
Magnetic devices with a ferromagnetic layer having perpendicular magnetic asisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer
OwnerEric Edward Fullerton, Stefan Maat +2inventors
InventorsEric Edward Fullerton, Stefan Maat, Stuart Stephen Papworth Parkin, Kentaro Takano
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Abstract
The invention is a magnetic device that includes a ferromagnetic/antiferromagnetic (F/AF) structure wherein the ferromagnetic layer is perpendicularly exchange biased by the antiferromagnetic layer. The invention has application to perpendicular magnetic recording disks and magnetic tunnel junction devices used as read heads for disk drives and memory cells in magnetic memory arrays.
Claims19
A magnetic device comprising:
- a layer of ferromagnetic material;
- a layer of antiferromagnetic material interfacially exchange coupled with the ferromagnetic layer, whereby the ferromagnetic layer exhibits perpendicular exchange bias.
A magnetic device comprising:
- a substrate;
- and
- a bilayer of a ferromagnetic layer and an antiferromagnetic layer on the substrate, the ferromagnetic layer having perpendicular magnetic anisotropy with its magnetic moment oriented generally perpendicular to the plane of the ferromagnetic layer and being perpendicularly biased by the antiferromagnetic layer.
Dependencies are inferred from the claim text.