Integrated circuit and process for fabricating the same

An apparatus comprising:

• a monocrystalline silicon substrate;
• an amorphous oxide layer overlying the monocrystalline silicon substrate;
• a monocrystalline perovskite oxide layer overlying the amorphous oxide layer;
• a monocrystalline ferroelectric and piezoelectric layer overlying the monocrystalline perovskite oxide layer;
• and
• a surface acoustic wave device located in and over the monocrystalline ferroelectric and piezoelectric layer.

A process for fabricating an integrated circuit comprising:

• providing a monocrystalline silicon substrate;
• depositing a monocrystalline perovskite oxide layer overlying the monocrystalline silicon substrate;
• forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide layer and the monocrystalline silicon substrate;
• forming a monocrystalline piezoelectric layer overlying the monocrystalline perovskite oxide layer;
• and
• forming a surface acoustic wave device located in and over the monocrystalline piezoelectric layer