Hybrid integrated circuit device

A semiconductor device which is comprising of;

• a semiconductor element;
• fine metal wires connected with said semiconductor element, wherein
• said semiconductor device is further comprising of conductive paths which are spatially discrete with one another, and said semiconductor device, said fine metal wires and said conductive paths are integrally molded as a single package.

A hybrid integrated circuit device at least comprising a mounting board having at least a surface insulated and with a plurality of conductive patterns, a small signal type semiconductor element electrically connected to said conductive pattern, a large signal type semiconductor element electrically connected to said conductive pattern,

• Au-metal wires for bonding connecting electrodes of said small signal type semiconductor element, and
• Al-metal wires for bonding connecting electrodes of said large signal type semiconductor element with said at least one of conductive patterns, wherein
• a semiconductor device is mounted on said mounting board, said semiconductor device having a plurality of conductive paths electrically separated by a trench, a small signal type semiconductor element fixed on said conductive path, an Au wire connecting said small signal type semiconductor element with said conductive path, and an insulating resin for coating said semiconductor element and the Au wire and being filled in said trench between said conductive paths to serve as the integral support, with a back face of said conductive paths exposed.

A hybrid integrated circuit device at least comprising a mounting board having at least an insulated surface and with a plurality of conductive patterns, a small signal type semiconductor element electrically connected to said conductive pattern, a large signal type semiconductor element electrically connected to said conductive pattern,

• Au-metal wires for bonding connecting electrodes of said small signal type semiconductor element, and
• Al-metal wires for bonding connecting electrodes of said large signal type semiconductor element with said at least one of conductive patterns, wherein
• a semiconductor device is mounted on said mounting board, said semiconductor device having a plurality of conductive paths electrically separated by a trench, a large signal type semiconductor element fixed on said conductive path, an Al wire connecting said large signal type semiconductor element with said conductive path, and an insulating resin for coating said large signal type semiconductor element and the Al wire and being filled in said trench between said conductive paths to serve as the integral support, with a back face of said conductive paths exposed.

A hybrid integrated circuit device at least comprising a mounting board having at least an insulated surface and with a plurality of conductive patterns, a small signal type semiconductor element electrically connected to said conductive pattern, a large signal type semiconductor element electrically connected to said conductive pattern, a small diameter fine metal wire for bonding at least a bonding electrode of said small signal type semiconductor element with said conductive pattern, and a large diameter fine metal wire for bonding said conductive patterns, wherein:

• a semiconductor device is mounted on said mounting board, said semiconductor device having a plurality of conductive paths electrically separated by a trench, a small signal type semiconductor element fixed on said conductive path, a small diameter fine metal wire connecting said small signal type semiconductor element with said conductive path, and an insulating resin for coating said semiconductor element and the small diameter fine wire and being filled in said trench between said conductive paths to serve as the integral support, with a back face of said conductive paths exposed, wherein connecting means other than said small diameter fine metal wire is used in an area except where said semiconductor device is mounted.

A hybrid integrated circuit device at least comprising a mounting board having at least an insulated surface and with a plurality of conductive patterns, a small signal type semiconductor element electrically connected to said conductive pattern, a large signal type semiconductor element electrically connected to said conductive pattern, a small diameter fine metal wire for bonding said conductive patterns, and a large diameter fine metal wire for bonding said large signal type semiconductor element with said conductive pattern, wherein:

• a semiconductor device is mounted on said mounting board, said semiconductor device having a plurality of conductive paths electrically separated by a trench, a large signal type semiconductor element fixed on said conductive path, a large diameter fine metal wire connecting said large signal type semiconductor element with said conductive path, and an insulating resin for coating said large signal type semiconductor element and the large diameter fine metal wire and being filled in said trench between said conductive paths to serve as the integral support, with a back face of said conductive paths exposed, wherein connecting means other than said large diameter fine metal wire is used in an area except where said large signal type semiconductor device is mounted.

The hybrid integrated circuit device according to any one of claims 11 to 19, wherein said conductive paths are composed of Cu, Al, Fe—Ni alloy, Cu—Al laminate, Al—Cu—Al laminate, or Cu—Al—Cu laminate.