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US 2004/0070060 A1Published application
Semiconductor device having radiation structure
AssigneeDenso Corporation
InventorsKuniaki Mamitsu, Yasuyoshi Hirai
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.
Claims65
A semiconductor device comprising:
- a semiconductor chip:
- first and second radiation members thermally and electrically connected to the semiconductor chip interposed therebetween, and having a radiation surface for radiation heat from the semiconductor chip;
- and
- first and second bonding members respectively interposed between the first radiation member and the semiconductor chip and between the semiconductor chip and the second radiation member, wherein:
- the first and second radiation members are made of a metallic material that is superior to tungsten and molybdenum in at least one of an electrical conductivity and a thermal conductivity.
2 more elements
A semiconductor device, comprising:
- first and second semiconductor chips:
- and
- first and second radiation members thermally and electrically connected to the first and second semiconductor chips interposed therebetween through a bonding member, and having a radiation surface for radiation heat from the first and second semiconductor chips, wherein:
- the first radiation member has first and second protruding portions protruding toward the first and second semiconductor chips;
- and
- first and second front end portions of the first and second protruding portions are thermally and electrically connected to the first and second semiconductor chips through the bonding member.
3 more elements
A semiconductor device, comprising:
- a semiconductor chip having an element formation surface and a back surface:
- a first conductive member bonded to the element formation surface of the semiconductor chip through a first bonding member having electrical conductivity;
- a second conductive member bonded to the back surface of the semiconductor chip through a second bonding member having electrical conductivity;
- and
- a third conductive member bonded to the first conductive member through a third bonding member having electrical conductivity, at an opposite side of the semiconductor chip,
- wherein a bonding area between the first conductive member and the third conductive member is smaller than that between the first conductive member and the semiconductor chip.
3 more elements
A semiconductor device, comprising:
- a semiconductor chip having an element formation surface and a back surface at an opposite side of the element formation surface;
- a first conductive member electrically connected to the element formation surface of the semiconductor chip;
- a second conductive member electrically connected to the back surface of the semiconductor;
- a third conductive member electrically connected to the first conductive member at an opposite side of the semiconductor chip;
- and
- a sealing member sealing the element formation surface and the back surface of the semiconductor chip respectively electrically connected to the first and second conductive members, and a face of the third conductive member electrically connected to the first conductive member, wherein:
- the first conductive member has a step portion at a portion facing an outer periphery of the sealing member, the first conductive member having a thin thickness portion by providing the step portion.
4 more elements
A semiconductor device, comprising:
- a substrate made of Si, having an element formation surface and a back surface at an opposite side of the element formation surface;
- an electrode formed on the element formation surface of the substrate and made of pure Al excluding an impurity;
- and
- a barrier metal disposed between the electrode and the substrate, for preventing Si from being dissolved in the electrode.
1 more element
A semiconductor device, comprising:
- a semiconductor chip having a first surface and a second surface:
- a first radiation member bonded to the first surface of the semiconductor chip through a first bonding member having thermal conductivity;
- and
- a second radiation member bonded to the second surface of the semiconductor chip through a second bonding member having thermal conductivity, the second radiation member having a concave portion for holding therein the semiconductor chip therein.
1 more element
A semiconductor device, comprising:
- a semiconductor chip having a first surface and a second surface:
- a first radiation member having a convex portion that is bonded to the first surface of the semiconductor chip through a first bonding member having thermal conductivity;
- and
- a second radiation member bonded to the second surface of the semiconductor chip through a second bonding member having thermal conductivity;
- a control electrode provided on the first surface of the semiconductor chip;
- a lead frame electrically connected to the control electrode, wherein:
- one of the first radiation member and the second radiation member has a protruding portion at a side facing the semiconductor chip;
- the protruding portion is fixedly inserted into a hole formed in the lead frame to fix the one of the first radiation member and the second radiation member;
- and
- a spacer is disposed in a space defined between the one of the first radiation member and the second radiation member to position the one of the first radiation member and the second radiation member, and the semiconductor chip in a thickness direction of the semiconductor chip.
7 more elements
A semiconductor device, comprising:
- a semiconductor chip having a first surface and a second surface;
- a first conductive member bonded to the first surface of the semiconductor chip through a first soldering member;
- and
- a second conductive member bonded to the second surface of the semiconductor chip through a second soldering member, a fusing point of which is lower than that of the first soldering member.
1 more element
A method for manufacturing a semiconductor device, comprising:
- bonding a semiconductor chip to a first conductive member with a first soldering member interposed therebetween;
- bonding a second conductive member to the semiconductor chip with a second soldering member interposed therebetween, the second soldering member having a fusing point lower than that of the first soldering member;
- performing a reflow treatment only to the second soldering member;
- and
- applying a pressure to the second conductive member from a side opposite to the semiconductor chip to control a degree of parallelization between the first conductive member and the second conductive member.
2 more elements
A method for manufacturing an electronic instrument, comprising:
- interposing a heating element between first and second radiation members through a bonding member;
- interposing a jig in a space defined between the first and second radiation members so that the jig contacts the first and second radiation members, the jig being for fixing a distance between the first and second radiation members;
- externally pressurizing the first and second radiation members to bond the first and second radiation members and the heating element with the bonding member.
A method for manufacturing an electronic instrument, comprising:
- interposing a heating element between first surfaces of first and second radiation members with a first bonding member interposed between the first surface of the first radiation member and the heating element, and a second bonding member interposed between the first surface of the second radiation member and the heating element;
- preparing a first jig having a first protruding portion on a first jig surface thereon, and a second jig having a second protruding portion on a second jig surface thereon;
- disposing the first jig with the first jig surface facing a second surface of the second radiation member, and the second jig with the second jig surface facing a second surface of the first radiation member;
- making a front end portion of the first protruding portion abut the first surface of the first radiation member, and making a front end portion of the second protruding portion abut the first surface of the second radiation member while keeping a distance between the first jig and the second jig constant;
- and
- pressuring the first and second radiation members from the second surfaces of the first and second radiation members to bond the first and second radiation members and the heating element with the first and second bonding members.
3 more elements
Dependencies are inferred from the claim text.