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US 2004/0070047 A1Published application
Power semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsGourab Majumdar, Shinji Hatae, Akihisa Yamamoto
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Abstract
A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate, and first and second MOSFETs formed on opposite sides of the isolating region, respectively.
Claims10
A semiconductor device having a plurality of MOSFETs including a vertical MOSFET formed on a substrate, comprising:
- a silicon carbide substrate having front and back surfaces facing each other;
- an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate;
- and
- first and second MOSFETs formed on opposite sides of the isolating region, respectively.
1 more element
Dependencies are inferred from the claim text.