Reliable dual gate dielectrics for MOS transistors
OwnerHiroaki Niimiinventor
Life of this patent
Estimating the term…
Abstract
Dual gate dielectric layers are formed on a semiconductor substrate for MOS transistor fabrication. Initial dielectric layers are formed on a semiconductor substrate (10). The initial layers are removed in regions of the substrate and a third dielectric layer (160) is formed in these regions. Forming the third dielectric layer (60) modifies the initial dielectric layers and results in final dielectric layers (170, 180). MOS transistors are then fabricated using the dielectric layers (160) (170, 180).
Claims16
A method for forming MOS transistor gate dielectrics, comprising:
- providing a semiconductor substrate;
- forming a first dielectric layer on said semiconductor substrate;
- forming a second dielectric layer on said first dielectric layer;
- removing said second dielectric layer and said first dielectric from a region of said substrate;
- and
- forming a third dielectric layer on said semiconductor substrate in said region from which said first and second dielectric layers were removed.
A method for forming integrated circuit MOS transistors, comprising:
- providing a semiconductor substrate;
- forming a first dielectric layer comprising silicon and oxygen;
- forming a silicon oxynitride layer on said first dielectric layer;
- removing said first dielectric layer and said silicon oxynitride layer from a region of said substrate;
- and
- forming a plasma nitrided oxide layer on said semiconductor substrate in said region from which said first dielectric layer and said silicon oxynitride layer were removed.
Integrated circuit MOS transistors, comprising:
- a semiconductor substrate;
- a dielectric stack comprising a first and second dielectric layer formed on a first region of said semiconductor substrate;
- a third dielectric layer formed on a second region of said semiconductor substrate;
- a first transistor gate formed on said dielectric stack;
- and
- a second transistor gate formed on said third dielectric layer.
Dependencies are inferred from the claim text.