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US 2004/0070045 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKyoichi Suguro, Kiyotaka Miyano, Ichiro Mizushima, Yoshitaka Tsunashima, Takayuki Hiraoka, Yasushi Akasaka, Tsunetoshi Arikado
Life of this patent
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Abstract
In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.
Claims33
A semiconductor comprising:
- a substrate having a semiconductor layer;
- an element isolating insulating film for partitioning said semiconductor layer into a plurality of element regions, the element isolating insulating film being formed on said substrate so as to penetrate said semiconductor layer and having a top surface projecting upward above a surface of said semiconductor layer;
- and
- A MOS type element formed within a corresponding one of the element regions and having a gate insulating film, wherein:
- a difference in height from the substrate between the top surface position of said element isolating insulating film and the top surface position of said semiconductor layer is at least three times as large as the thickness of said gate insulating film.
2 more elements
A semiconductor device comprising:
- a substrate having a semiconductor layer;
- an element isolating insulating film for partitioning said semiconductor layer into a plurality of element regions, the element isolating insulating film being formed on said substrate so as to penetrate said semiconductor layer and having a top surface projecting upward above a surface of the semiconductor layer;
- and
- A MOS type element formed within a corresponding one of said element regions, wherein:
- a difference in height from the substrate between the top surface position of the semiconductor layer and the top surface position of the element isolating insulating film is at least 10 nm.
2 more elements
A semiconductor device comprising:
- a substrate having a semiconductor layer;
- an element isolating insulating film for partitioning said semiconductor layer into a plurality of element regions, the element isolating insulating film being formed on said substrate so as to penetrate said semiconductor layer and having a top surface projecting upward above a surface of the semiconductor layer;
- and
- A MOS type element formed within a corresponding one of said element regions and having a gate insulating film and a metal gate electrode formed thereon, wherein:
- said gate insulating film and said metal gate electrode are formed on a top surface and sides of the semiconductor layer in said element region which are not covered with said element isolating insulating film.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate having on its surface a recess and at least one projection formed in the a recess, the projection having a channel region;
- an element isolating insulating film formed in the said recess
- a MIS type semiconductor element formed on said semiconductor substrate and including a gate electrode formed on said channel region of said projection via a gate insulating film, and a source and a drain regions formed to pinch said channel region of said projection therebetween, wherein:
- a channel region of said MIS type semiconductor element is formed to reach said at least one projection located adjacent to the MIS type semiconductor element in its channel width direction via said recess, and a top surface of said at least one projection is located higher than the top surface of said element isolating insulating film.
1 more element
A semiconductor device comprising:
- a semiconductor substrate having a recess and projections formed on its surface;
- an element isolating insulating film formed in said a recess and having its top surface located below top surfaces of said projections;
- and
- a MIS type semiconductor element using a region of said semiconductor substrate as a channel region and including a gate electrode formed on said channel region via a gate insulating film, and a source and a drain regions formed to pinch said channel region therebetween, wherein:
- said channel region of said MIS type semiconductor element is divided into at least two sections in the channel width direction by means of said element isolating insulating film and has first regions near steps between said recesses and said projections and second regions corresponding to the projections between the first regions, and
- Wi−Wt>Gt where Gt denotes the sum of the widths of said a recess in the channel with direction, Wt denotes the sum of the widths of said projections in the channel with direction, and Wi denotes an assumed channel width of an assumed semiconductor element in which its channel width is equal to that of the MIS type semiconductor element, in which the current density of a current through its channel region is equivalent to that of a current through the second regions of said MIS type semiconductor element, and in which the total current through its channel region is equivalent to that through the channel region of said MIS type semiconductor element.
3 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulating film on a semiconductor substrate;
- forming openings in said insulating film to partly expose a surface of said semiconductor substrate;
- using the exposed portion as a seed to epitaxially grow and form a semiconductor layer of thickness sufficient to fill said openings and to extend upward above said insulating film;
- and
- removing portions of said semiconductor layer outside said openings.
2 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a monocrystalline insulating film on a semiconductor substrate;
- forming a non-monocrystalline insulating film on said monocrystalline insulating film;
- forming openings in said non-monocrystalline insulating film to partly expose a surface of said semiconductor substrate;
- using the exposed portion as a seed to epitaxially grow and form a semiconductor layer of thickness sufficient to fill said openings and to extend upward above said insulating film;
- and
- removing portions of said semiconductor layer outside said openings.
3 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulating film on a semiconductor substrate;
- forming openings in said insulating film to partly expose a surface of said semiconductor substrate;
- using the exposed portion as a seed to epitaxially grow and form in said openings a semiconductor layer that is not thick enough to reach an opening surface of each of said openings;
- and
- heating said semiconductor layer in an inert gas atmosphere.
2 more elements
Dependencies are inferred from the claim text.