Perovskite cuprate electronic device structure and process

Abstract

High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Some preferred electronic devices are described that use a layer or pattern of a perovskite cuprate (2125, 2305, 2310, 2315, 2405) such as YBa2Cu3O7−y(YBCO) or Y1−xPrxBa2Cu3O7−y(YPBCO, 0<x<1) over a buffer layer (2120) of lanthanum strontium aluminum tantalate (LSAT).

Dependencies are inferred from the claim text.