Thin film transistor with metal oxide layer and method of making same
AssigneeMatrix Semiconductor, Inc.
InventorsMaitreyee Mahajani, Andrew J. Walker
Life of this patent
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Abstract
A thin film transistor includes an insulating substrate, an active layer located over the substrate, a gate electrode located over the substrate; and a charge storage region located between the active layer and the gate electrode. The charge storage region includes a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling dielectric and the blocking dielectric. At least one of the tunneling dielectric, the charge storage dielectric and the blocking dielectric comprises a layer having a dielectric constant greater than 3.9, such as a metal oxide layer.
Claims38
A thin film transistor, comprising:
- an insulating substrate;
- an active layer located over the substrate;
- a gate electrode located over the substrate;
- and
- a charge storage region located between the active-layer and the gate electrode, wherein:
- the charge storage region comprises a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling dielectric and the blocking dielectric;
- and
- at least one of the tunneling dielectric, the charge storage dielectric and the blocking dielectric comprises a layer having a dielectric constant greater than 3.9.
An inverted thin film transistor, comprising:
- an insulating substrate;
- a gate electrode located over the insulating substrate;
- an active layer located over the gate electrode;
- and
- a charge storage region located between the active layer and the gate electrode, wherein:
- the charge storage region comprises a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling dielectric and the blocking dielectric;
- and
- at least one of the tunneling dielectric, the charge storage dielectric and the blocking dielectric comprises a layer having a dielectric constant greater than 3.9.
A monolithic three dimensional array, comprising:
- a substrate;
- and
- a plurality of device levels comprising a plurality of thin film transistors with charge storage regions;
- wherein at least one of a tunneling dielectric, a charge storage dielectric and a blocking dielectric in the charge storage regions comprises a metal oxide layer.
A thin film transistor, comprising:
- an insulating substrate;
- an active layer located over the substrate;
- a control gate electrode located over the substrate;
- and
- a charge storage region located between the active layer and the control gate electrode, wherein the charge storage region comprises a metal oxide tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the control gate electrode and a floating gate located between the tunneling dielectric and the blocking dielectric.
Dependencies are inferred from the claim text.