US 2004/0069950 A1Published application

Scintillator

AssigneeToyoda Gosei Co., Ltd.

InventorsMasanobu Ando, Katsuhisa Sawazaki, Masaaki Nakayama

Life of this patent

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A scintillator is made of a Group III nitride compound semiconductor layer.

Dependent claims

A scintillator comprising a Group III nitride compound semiconductor.

Dependencies are inferred from the claim text.

G01T 1/2985
Measurement of spatial distribution of radiation: in depth localisation, e.g. using positron emitters; Tomographic imaging
G01T 1/1644
Static instruments for imaging the distribution of radioactivity in one or two dimensions using one or several scintillating elements;…: using an…
G01T 1/2023
The detector being a crystal: selection of materials
G01T
Measurement of nuclear or x-radiation

From the US filing history. Foreign family members aren’t listed.

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