Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a glass substrate;
• forming an insulating layer for covering a top surface and side surface of the semiconductor layer;
• forming a conductive layer over the semiconductor layer with the insulating layer therebetween;
• processing a first laser beam with a wavelength of visible light or a shorter wavelength than visible light into a long beam at a irradiated surface or a vicinity thereof;
• and
• heating the conductive layer selectively to perform heat treatment of the semiconductor layer and the insulating layer by irradiating a second laser beam of a fundamental wave and the long beam at the same time to a region of the irradiated surface while moving the irradiated surface relatively in a direction with respect to the long beam.

A method of irradiating laser comprising the steps of:

• processing a first laser beam with a wavelength of visible light or a shorter wavelength than visible light into a long beam at an irradiated surface or a vicinity thereof;
• and
• irradiating a second laser beam of a fundamental wave and the long beam to a region of the irradiated surface while moving the irradiated surface relatively with respect to the long beam in a direction,
• wherein the long beam is overlapped with the second laser beam at the region.

A method for manufacturing a semiconductor device comprising the steps of:

• processing a first laser beam with a wavelength of visible light or a shorter wavelength than visible light into a long beam at a surface of a semiconductor film or a vicinity thereof;
• and
• crystallizing the semiconductor film by irradiating a second laser beam of a fundamental wave and the long beam to a region of the surface while moving the surface relatively with respect to the long beam in a direction,
• wherein the long beam is overlapped with the second laser beam at the region.

A method for manufacturing a semiconductor device comprising the steps of:

• processing a first laser beam with a wavelength of visible light or a shorter wavelength than visible light into a long beam at a surface of a semiconductor film or a vicinity thereof;
• and
• activating an impurity region formed in the semiconductor film by irradiating a second laser beam of a fundamental wave and the long beam at the same time to a region of the surface while moving the surface relatively with respect to the long beam in a direction,
• wherein the long beam is overlapped with the second laser beam at the region.