Dry etching apparatus, dry etching method, and cleaning method adopted in dry etching apparatus
AssigneeKYOCERA Corporation
InventorsYosuke Inomata, Yuko Fukawa
Life of this patent
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Abstract
A dry etching apparatus including a plate 15 provided in parallel or nearly parallel with an RF electrode 9 to cover a substrate 1 placed on the RF electrode 9 directly or through a tray 24. The plate 15 is provided with planar or nearly planar obstacles 16 that inhibit a gas and plasma from passing through the plate 15 as well as opening portions 19. This makes it possible to achieve conditions under which etching residues attach to the surface of the substrate faster by trapping the etching residues in a space between the surface of the substrate 1 and the plate 15. Fine textures can be thus formed efficiently on the surface of the substrate (FIG. 4).
Claims21
A dry etching apparatus, comprising:
- a chamber;
- an RF electrode provided inside said chamber;
- and
- a plate provided in parallel or nearly parallel with said RF electrode to cover a substrate to be etched, placed on said RF electrode directly or through a tray,
- wherein said plate is provided with a planar or nearly planar obstacle that inhibits a part of gas and plasma from passing through said plate.
A dry etching method for forming fine textures on a surface of a substrate to be etched, said dry etching method comprising:
- placing a substrate to be etched on an RF electrode provided inside a chamber, directly or through a tray;
- and
- covering said substrate to be etched with a plate,
- wherein said plate is provided with a planar or nearly planar obstacle that inhibits apart of gas and plasma from passing through said plate.
A dry etching apparatus, comprising:
- a chamber;
- an RF electrode provided inside said chamber;
- and
- a plate provided with a number of opening portions and provided in parallel or nearly parallel with said RF electrode to cover a substrate to be etched, placed on said RF electrode directly or through a tray,
- wherein said plate is structured in such a manner that a surface and a back surface are reversed.
A dry etching method, comprising:
- placing a substrate to be etched on an RF electrode provided inside a chamber, directly or through a tray;
- and
- covering said substrate to be etched with a plate provided with a number of opening portions,
- wherein fine textures are formed on a surface of said substrate to be etched and said plate is cleaned on a surface side concurrently.
A cleaning method adopted in a dry etching apparatus for cleaning a surface of a plate, said cleaning method comprising:
- carrying out a substrate from a chamber;
- placing a plate provided with a number of opening portions inside said chamber;
- and
- introducing an etching gas inside said chamber.
Dependencies are inferred from the claim text.