Tunnel effect nanodetector of mechanical vibrations and method for preparation thereof

A method for preparation of the tunnel effect nanodetector of mechanical vibrations based on using the planar semiconductor technology and incorporating such steps as preparation of the pin and membrane of the sensitive element, forming the latter plating layers, forming the insulation layer and forming the plating layer for the deflection electrode, wherein the sensor's pin and the recesses for membrane corrugations are formed within the monolith of silicon substrate, for this to achieve the mask layer of the silicon nitride is deposited from gaseous phase, the photolithography is carried out followed by dry etching with forming the patterns of the pin and of recesses for membrane corrugations the sections of the silicon nitride mask layer to be removed are exposed to reactive ion etching, the isotropic plasma-chemical etching, anisotropic reactive ion etching and local thermal oxidation are successively performed, thereafter the silicon nitride mask and also the layer of the silicon oxide are chemically stripped;

• when forming the mentioned insulation layer and the plating layers for the pin and deflection electrode, the silicon substrate is thermally oxidized, the silicon nitride layer is deposited from gaseous phase, the vacuum deposition of the noble metal is performed, the photolithography is carried out followed by dry etching with forming the plating patterns of the pin and deflection electrode, the layer of the noble metal is exposed to reactive ion etching, thereafter the photoresist mask layer is removed by the plasma-chemical way, the gap-forming layer is prepared, for this aim a layer of the fusible phosphorous borosilicate glass is deposited from gaseous phase and fire-polished, the photolithography is carried out with obtaining the pattern of the gap-forming layer, the layer of the fusible phosphorous borosilicate glass is exposed to reactive ion etching, after that the high-melting layer of the silicon oxide is deposited from the gaseous phase, during forming the mentioned membrane plating layer the vacuum deposition of the noble metal and photolithography are carried out with forming the plating pattern, the noble metal layer is exposed to reactive ion etching, thereafter the mask layer of photoresist is plasma-chemically removed, the membrane and the elements of electronic means of the tunnel effect nanodetector are formed, for this purpose a layer of the polycrystalline silicon is required to be deposited from the gaseous phase and the photolithography to be carried out for forming the pattern of the membrane and of holes on its surface as well as patterns of components of electronic means of the tunnel effect nanodetector, the layer of polycrystalline silicon and the layer of membrane plating are exposed to reactive ion etching and the mask layer of the photoresist is stripped by the plasma-chemical way, after that the selective chemical etching of the gap-forming layer from the phosphorous borosilicate glass and the layer of the silicon oxide is performed through the holes in the membrane followed by flushing the substrate in the running deionized water.