US 2004/0063299 A1 · Semiconductor device and method for fabricating the same

Abstract

A semiconductor device of the present invention includes a MISFET provided in an element formation region Re of a semiconductor substrate 11 and a trench isolation 13 surrounding the sides of the element formation region Re. An oxygen-passage-suppression film 23 is provided from the top of the trench isolation 13 to the top of a portion of the element formation region Re adjacent to the trench isolation 13. The oxygen-passage-suppression film 23 is made of a silicon nitride film or the like through which oxygen is less likely to permeate. Therefore, since it becomes hard that the upper edge of the element formation region Re of the semiconductor substrate 11 is oxidized, an expansion of the volume of the upper edge is suppressed, thereby reducing a stress.

Claims14

Dependent claims

A semiconductor device comprising:

a semiconductor layer including an element formation region;
a trench isolation surrounding the element formation region of the semiconductor layer;
and
a coating film having the property of suppressing passage of oxygen, said coating film covering at least a portion of the trench isolation and a portion of the element formation region astride the border between the trench isolation and the element formation region.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

10/630,800Filed 31 Jul 2003

Priority

JP 2002-2885311 Oct 2002

Published

1 Apr 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10W 10/014
Of isolation regions comprising dielectric materials: using trench refilling with dielectric materials, e.g. shallow trench isolations
H10D 84/0151
The components including insulated gates, e.g. IGFETs: manufacturing their isolation regions
H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10W 10/17
Isolation regions comprising dielectric materials: formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Semiconductor device and method for fabricating the same

Life of this patent

Semiconductor device and method for fabricating the same

Life of this patent

Abstract

Claims14