Method for forming a semiconductor device structure a semiconductor layer

A method for forming a semiconductor device structure in a semiconductor layer, comprising:

• forming a first region and a second region of opposite conductivity type in the semiconductor layer, the first region and the second region being electrically isolated by an isolation region;
• forming a control electrode dielectric overlying the first region and the second region;
• forming a silicon-containing layer overlying and in contact with the control electrode dielectric;
• patterning a mask layer to overlie a selective portion of the silicon-containing layer;
• depositing a first metal layer overlying the silicon-containing layer and the mask layer;
• annealing the semiconductor device structure to form a first control electrode silicide by chemical reaction between the first metal layer and those portions of the silicon-containing layer not underlying the mask layer;
• removing remaining portions of the first metal layer that did not chemically react with the silicon-containing layer;
• and
• exposing the semiconductor device in an oxygen rich environment to modify a thickness of a portion of the control electrode dielectric that is not underlying the first control electrode silicide.

A method for forming a semiconductor device structure in a semiconductor layer, comprising:

• forming a first region and a second region of opposite conductivity type in the semiconductor layer, the first region and the second region being electrically isolated by an isolation region;
• forming a control electrode dielectric overlying the first region and the second region;
• forming a silicon-containing layer overlying and in contact with the control electrode dielectric;
• patterning a mask layer to overlie a selective portion of the silicon-containing layer;
• depositing a first metal layer overlying the silicon-containing layer and the mask layer;
• annealing the semiconductor device structure to form a first control electrode silicide of a first control electrode by chemical reaction between the first metal layer and those portions of the silicon-containing layer not underlying the mask layer, the first control electrode silicide being formed without patterning the first metal layer;
• removing remaining portions of the first metal layer that did not chemically react with the silicon-containing layer;
• removing the mask layer;
• forming a second control electrode having a different work function than the first control electrode;
• and
• completing formation of a first transistor using the first control electrode and completing formation of a second transistor using the second control electrode.

A method for forming a semiconductor device structure in a semiconductor layer, comprising:

• forming a first region and a second region of opposite conductivity type in the semiconductor layer, the first region and the second region being electrically isolated by an isolation region;
• forming a control electrode dielectric overlying the first region and the second region;
• forming a silicon-containing layer overlying and in contact with the control electrode dielectric;
• doping a first portion of the silicon-containing layer with a first predetermined dopant material;
• doping a second portion of the silicon-containing layer with a second predetermined dopant material;
• depositing a metal layer overlying the silicon-containing layer;
• annealing the semiconductor device to form a first control electrode silicide in the first portion of the silicon-containing layer and to form a second control electrode silicide in the second portion of the silicon-containing layer;
• forming a first control electrode from the first control electrode silicide and forming a second control electrode from the second control electrode silicide;
• and
• completing formation of a first transistor using the first control electrode and completing formation of a second transistor using the second control electrode.