Process for producing semiconductor integated circuit device
AssigneeRenesas Technology Corp.
InventorsNaoki Yamamoto, Hiroyuki Uchiyama, Norio Suzuki, Eisuke Nishitani, Shin?apos;ichiro Kimura, Kazuyuki Hozawa
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Abstract
When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
Claims46
A method for manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a refractory metal film on a first principal surface of a wafer;
- (b) heating the first principal surface of the wafer having the refractory metal film formed thereon up to a first temperature of 600 degrees centigrade or more under conditions for reducing an oxide of the refractory metal;
- and
- (c) subjecting a portion on the first principal surface of the wafer containing silicon as a main component to an oxidation treatment at the first temperature in a mixed gas atmosphere containing hydrogen, and moisture catalytically synthesized from oxygen and hydrogen without oxidizing the refractory metal film.
A method for manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a refractory metal film on a first principal surface of a wafer;
- (b) heating the first principal surface of the wafer having the refractory metal film formed thereon up to a first temperature of 600 degrees centigrade or more by lamp heating under conditions for reducing an oxide of the refractory metal film;
- and
- (c) subjecting a portion on the first principal surface of the wafer containing silicon as a main component to an oxidation treatment at the first temperature in a mixed gas atmosphere containing hydrogen and moisture without oxidizing the refractory metal film.
A method for manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a film pattern including a refractory metal film on a first principal surface of a wafer;
- (b) heating the first principal surface of the wafer including the film pattern formed thereon up to a first temperature of 600 degrees centigrade or more under conditions for reducing an oxide of the refractory metal film;
- and
- (c) forming an insulating film on the first principal surface of the wafer including the film pattern formed thereon at the first temperature by chemical vapor deposition.
A method for manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a film pattern including a refractory metal film on a first principal surface of a wafer;
- (b) subjecting the first principal surface of the wafer including the film pattern formed thereon to a plasma treatment under conditions for reducing an oxide of the refractory metal film;
- and
- (c) forming an insulating film on the first principal surface of the wafer subjected to the plasma treatment by plasma chemical vapor deposition.
A method for manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a refractory metal film on a first principal surface of a wafer;
- (b) subjecting a portion on the first principal surface of the wafer containing silicon as a main component to an oxidation treatment at a first temperature of 600 degrees centigrade or more in a mixed gas atmosphere containing hydrogen and moisture without oxidizing the refractory metal film;
- and
- (c) washing the first principal surface of the wafer with a neutral or weakly alkaline water or chemical solution substantially not containing hydrogen peroxide after the step (b).
A method for manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a refractory metal film on a first principal surface of a wafer;
- and
- (b) washing the first principal surface of the wafer using a neutral or weakly alkaline water or chemical solution substantially not containing hydrogen peroxide after the step (a) and immediately before a step of subjecting the wafer to a heat treatment in a non-oxidizing atmosphere.
41 The method for manufacturing a semiconductor integrated circuit device according to claim 37, wherein the temperature of the water or chemical solution is less than 50 degrees centigrade, or 70 degrees centigrade or more.
The method for manufacturing a semiconductor integrated circuit device according to claim 41, wherein the temperature of the water or chemical solution is less than 45 degrees centigrade, or 75 degrees centigrade or more.
Dependencies are inferred from the claim text.