Etching method, gate etching method, and method of manufacturing semiconductor devices
AssigneeOki Electric Industry Co., Ltd.
InventorAkira Takahashi
Life of this patent
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Abstract
In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carried out. The layer and the resist patter of the dummy sample are etched in an etching device so that the layer and the resist pattern of the dummy device are simultaneously slimmed. Finally, the layer and the resist patter of the actual device are etched in the etching device after the etching of the dummy sample so that the layer and the resist pattern of the actual device are simultaneously slimmed.
Claims18
A method of manufacturing a semiconductor device comprising:
- preparing a dummy sample and an actual device both of which have substantially an identical layer and an identical resist pattern formed on the layer;
- carrying out dummy discharge;
- etching the layer and the resist patter of the dummy sample in an etching device so as to be simultaneously slimmed the layer and the resist pattern of the dummy device;
- and
- etching the layer and the resist patter of the actual device in the etching device after the etching of the dummy sample so as to be simultaneously slimmed the layer and the resist pattern of the actual device.
A method of manufacturing a semiconductor device comprising:
- preparing a dummy sample and an actual device each of which has a layer and a resist pattern formed on the layer, wherein each of the layers and the resist patterns of the dummy sample and the actual device have substantially identical material, but have a different size each other;
- carrying out dummy discharge;
- etching the layer and the resist patter of the dummy sample in an etching device so as to be simultaneously slimmed the layer and the resist pattern of the dummy device;
- and
- etching the layer and the resist patter of the actual device in the etching device after the etching of the dummy sample so as to be simultaneously slimmed the layer and the resist pattern of the actual device.
A method of manufacturing a semiconductor device comprising:
- preparing a dummy sample having a resist layer formed on an entire surface of the sample and an actual device having a layer and a resist pattern formed on the layer, wherein the resist layer of the dummy sample and the resist pattern of the actual device have substantially identical material;
- carrying out dummy discharge;
- etching the layer and the resist patter of the dummy sample in an etching device so as to be simultaneously slimmed the layer and the resist pattern of the dummy device;
- and
- etching the layer and the resist patter of the actual device in the etching device after the etching of the dummy sample so as to be simultaneously slimmed the layer and the resist pattern of the actual device.
Dependencies are inferred from the claim text.