Thin-film semiconductor device and liquid crystal display
AssigneeNEC Corporation
InventorsNaoki Matsunaga, Kenji Sera, Mitsuasa Takahashi
Life of this patent
Estimating the term…
Abstract
A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate electrode electric field at each of the driving voltages of the plurality of thin-film transistors is in a range of about 1MV/cm to 2MV/cm, and a drain concentration of p-type thin-film transistors (TFT) is in a range of about 3E+19/cm3 to 1E+20/cm3.
Claims21
A thin-film semiconductor device comprising:
- a first plurality of thin-film transistors having different driving voltages than a second plurality of thin-film transistors, wherein said first and second plurality of transistors are formed on a glass substrate,
- wherein an electric field of a gate electrode at each of said driving voltages of said first and second plurality of thin-film transistors is in a range of about 1MV/cm to 2MV/cm, and a drain concentration of P-type thin-film transistors is in a range of about 3E+19/cm3 to 1E+20/cm3.
A thin-film semiconductor device comprising:
- a first plurality of thin-film transistors having different driving voltages than a second plurality of thin-film transistors, wherein said first and second plurality of transistors are formed on a glass substrate,
- wherein an electric field of a gate electrode at each of said driving voltages of said first and second plurality of thin-film transistors is in a range of about 0.2MV/cm to 0.8MV/cm, and a drain concentration of P-type thin-film transistors is in a range of about 3E+19/cm3 to 1E+20/cm3.
A thin-film semiconductor device comprising:
- a first plurality of thin-film transistors having a driving voltage which is lower than a driving range of a second plurality of thin-film transistors, wherein said first and second plurality of thin-film transistors are formed on a glass substrate,
- wherein a drain concentration of said first and second plurality of thin-film transistors is in a range of about 3E+19/cm3 to 1E+20/cm3.
A thin-film semiconductor device manufacturing method comprising:
- providing a glass substrate
- forming a plurality of gate insulating films of a plurality of thin-film transistors, wherein said gate insulating films are formed so as to have a substantially the same thickness, and
- wherein said plurality of thin-film transistors have different driving voltages.
Dependencies are inferred from the claim text.