Thin film semiconductor package and method of fabrication
AssigneeMegic Corporation
InventorsMou-Shiung Lin, Jin-Yuan Lee, Ching-Cheng Huang
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Abstract
A thin film semiconductor die circuit package is provided utilizing low dielectric constant (k) polymer material for the insulating layers of the metal interconnect structure. Five embodiments include utilizing glass, glass-metal composite, and glass/glass sandwiched substrates. The substrates form the base for mounting semiconductor dies and fabricating the thin film interconnect structure.
Claims58
A thin film semiconductor die package structure comprising:
- one or more semiconductor dies backside bonded on planar glass substrate;
- one or more layers of interconnect metal connected to and above said semiconductor dies;
- and
- one or more insulating layers of polymer with contact holes, formed around said interconnect metal.
A thin film semiconductor die packaging structure comprising:
- one or more semiconductor dies backside bonded on a planar glass substrate, wherein the glass substrate has cavities on the top surface for containing and bonding the semiconductor dies;
- one or more layers of interconnect metal connected to and above said semiconductor dies;
- and
- one or more insulating layers of polymer with contact holes, formed around said interconnect metal.
A thin film semiconductor die packaging structure comprising:
- one or more semiconductor dies backside bonded on a metal-glass composite substrate, wherein the glass has cavities for containing and bonding the semiconductor dies;
- one or more layers of interconnect metal connected to and above said semiconductor dies;
- and
- one or more insulating layers of polymer with contact holes, formed around said interconnect metal.
A thin film semiconductor die packaging structure comprising:
- one or more semiconductor dies backside bonded on a glass substrate;
- one or more layers of interconnect metal connected to and above said semiconductor dies;
- a glass layer between said semiconductor dies and the first of said one or more layers of interconnect metal;
- and
- one or more insulating layers of polymer with contact holes, formed around said interconnect metal.
A method for fabricating a thin film semiconductor die package, comprising the steps of:
- providing a planar glass substrate;
- attaching semiconductor dies to said planar glass substrate;
- sequentially depositing one or more polymer layers and one or more metal interconnect layers over said substrate;
- forming a layer of solder over and connected to said one or more metal interconnect layers;
- and
- reflowing the solder to form solder bumps.
A method of fabricating a thin film semiconductor die package structure comprising the steps of:
- providing a glass substrate with cavities having semiconductor dies mounted therein;
- sequentially forming polymer insulating layers and metal interconnect layers;
- forming a layer of solder;
- and
- reflowing the solder to form solder bumps.
A method of fabricating the thin film semiconductor die package structure comprising:
- providing a metal substrate;
- forming a glass layer with cavities for mounting semiconductor dies on said metal substrate;
- sequentially forming polymer insulating layers and metal interconnect layers;
- forming a layer of solder;
- and
- reflowing the solder to form solder bumps
A method of fabricating a thin film semiconductor die package structure comprising:
- providing a glass substrate with semiconductor dies mounted on the active surface;
- filling polymer or epoxy between and over the backside of said semiconductor dies, to obtain a planarized surface;
- grinding the planarized surface, and said backside of said semiconductor dies, to a desired thickness of said semiconductor dies;
- mounting a second glass substrate on the backside of the semiconductor dies;
- grinding the first glass substrate to a desired glass thickness;
- etching holes in said first glass substrate to expose said semiconductor dies;
- sequentially forming polymer insulating layers and metal interconnect layers over said first glass substrate;
- depositing a layer of solder;
- and
- reflowing the solder to form solder bumps.
47 The method of claim 46 wherein said semiconductor dies mounted within said multi-chip semiconductor packages comprise the same type of integrated circuit chips.
A method of fabricating a thin film semiconductor die package structure comprising:
- providing a glass substrate with semiconductor dies mounted on the active surface;
- filling polymer or epoxy between and over the backside of said semiconductor dies, to obtain a planarized surface;
- grinding the planarized surface, and said backside of said semiconductor dies, to a desired thickness of said semiconductor dies;
- mounting a second glass substrate on the backside of the semiconductor dies;
- removing said first glass substrate;
- sequentially forming polymer insulating layers and metal interconnect layers over said semiconductor dies;
- depositing a layer of solder;
- and
- reflowing the solder to form solder bumps.
Dependencies are inferred from the claim text.