Resist pattern, process for producing same, and utilization thereof

A photosensitive resin composition comprising (A) a binder polymer, (B1) a photopolymerizable compound having three ethylenically unsaturated bonds per molecule, (C) a photopolymerization initiator, and (D) either or both of a compound represented by general formula (I):

• 22
• (in the formula, m is an integer of 2 to 6)
• or a compound represented by general formula (II).
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A process for producing a resist pattern having an aspect ratio (ratio of the line width to the film thickness of the resist pattern) of 3.5 or higher, the process comprising the following steps:

• i) a step of forming on a substrate at a dry film thickness of 1 to 100 μm a resist layer formed from a photosensitive resin composition comprising a photopolymerizable compound having three ethylenically unsaturated bonds per molecule;
• ii) a step of imagewise exposing the resist layer to actinic radiation so that an exposed area thereof is light cured;
• and
• iii) a step of selectively removing an unexposed area of the resist layer by development.

A process for producing a resist pattern having an aspect ratio (ratio of the line width to the film thickness of the resist pattern) of 3.5 or higher, the process comprising the following steps:

• i) a step of forming on a substrate at a dry film thickness of 1 to 100 μm a resist layer formed from a photosensitive resin composition comprising either or both of a compound represented by general formula (I):
• 26
• (in the formula, m is an integer of 2 to 6)
• or a compound represented by general formula (II);
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• ii) a step of imagewise exposing the resist layer to actinic radiation so that an exposed area thereof is light cured;
• and
• iii) a step of selectively removing an unexposed area of the resist layer by development.

A process for producing a resist pattern having an aspect ratio (ratio of the line width to the film thickness of the resist pattern) of 3.5 or higher, the process comprising the following steps:

• i) a step of forming on a substrate at a dry film thickness of 1 to 100 μm a resist layer formed from a photosensitive resin composition comprising (A) a binder polymer, (B) a photopolymerizable compound having at least one ethylenically unsaturated bond per molecule, (C) a photopolymerization initiator, and (E) a leuco dye, the amount of component (E) added being 0.3 to 0.6 parts by weight relative to 100 parts by weight of the total of component (A) and component (B);
• ii) a step of imagewise exposing the resist layer to actinic radiation so that an exposed area thereof is light cured;
• and
• iii) a step of selectively removing an unexposed area of the resist layer by development.

A process for producing a resist pattern having an aspect ratio (ratio of the line width to the film thickness of the resist pattern) of 3.5 or higher, the process comprising the following steps:

• i) a step of forming on a substrate at a dry film thickness of 1 to 100 μm a resist layer formed from a photosensitive resin composition comprising (A) a binder polymer, (B) a photopolymerizable compound having at least one ethylenically unsaturated bond per molecule, and (C) a photopolymerization initiator, the component (C) comprising an N,N′-tetraalkyl-4,4′-diaminobenzophenone at 0.04 to 0.08 parts by weight relative to 100 parts by weight of the total of component (A) and component (B);
• ii) a step of imagewise exposing the resist layer to actinic radiation so that an exposed area thereof is light cured;
• and
• iii) a step of selectively removing an unexposed area of the resist layer by development.

A process for producing a resist pattern having an aspect ratio (ratio of the line width to the film thickness of the resist pattern) of 3.5 or higher, the process comprising the following steps:

• i) a step of forming on a substrate at a dry film thickness of 1 to 100 μm a resist layer formed from a photosensitive resin composition, the resist layer having an absorbance of 0.50 or less at an actinic radiation wavelength of 365 nm;
• ii) a step of imagewise exposing the resist layer to actinic radiation so that an exposed area thereof is light cured;
• and
• iii) a step of selectively removing an unexposed area of the resist layer by development.

A process for producing a resist pattern having an aspect ratio (ratio of the line width to the film thickness of the resist pattern) of 3.5 or higher, the process comprising the following steps:

• i) a step of forming on a substrate at a dry film thickness of 1 to 100 μm a resist layer formed from a photosensitive resin composition;
• ii) a step of imagewise exposing the resist layer to actinic radiation through a glass negative pattern so that an exposed area thereof is light cured;
• and
• iii) a step of selectively removing an unexposed area of the resist layer by development.

A process for producing a resist pattern having an aspect ratio (ratio of the line width to the film thickness of the resist pattern) of 3.5 or higher, the process including the following steps:

• i) a step of forming on a substrate at a dry film thickness of 1 to 100 μm a resist layer formed from a photosensitive resin composition;
• ii) a step of imagewise exposing the resist layer to a collimated light beam so that an exposed area thereof is light cured;
• and
• iii) a step of selectively removing an unexposed area of the resist layer by development.