Back to results
US 2004/0062867 A1Published application
Method to reduce photoresist poisoning
AssigneeTexas Instruments Incorporated
InventorsJames B. Friedmann, Shangting Detweiler, Brian M. Trentman
Life of this patent
Estimating the term…
Abstract
A silicon rich anti-reflective coating (30) is formed on a layer (10) in which narrow linewidth features are to be formed. Prior to the formation of a photoresist layer (50), the anti-reflecting coating (30) is exposed to excited oxygen species to reduce photoresist poisoning.
Claims7
A method to reduce photoresist poisoning, comprising:
- providing a first layer to be patterned;
- forming an inorganic anti-reflective coating layer on said first layer;
- exposing said anti-reflective coating layer to excited oxygen species;
- forming a photoresist layer on said anti-reflective coating layer;
- and
- patterning said photoresist layer.
3 more elements
A method for forming narrow features in integrated circuit manufacturing, comprising:
- providing a first layer to be patterned;
- forming a silicon rich anti-reflective coating layer on said first layer;
- exposing said silicon rich anti-reflective coating layer to excited oxygen species;
- forming a photoresist layer on said anti-reflective coating layer;
- and
- patterning said photoresist layer;
3 more elements
Dependencies are inferred from the claim text.