Method for defining the initial state of static random access memory
AssigneeAgere Systems Inc.
InventorsPaul Arthur Layman, Samir Chaudhry, James Gary Norman, J. Ross Thomson
Life of this patent
Estimating the term…
Abstract
A method for predetermining the initial state of the memory cells of a static random access memory such that when the memory is powered up the predetermined initial states are attained. The initial states can be predetermined by modifying one or more physical or operational parameters of the MOSFETS comprising the memory cells.
Claims36
A method for defining the initial state of a memory cell, comprising identifying a parameter of the memory cell that influences the initial state;
- determining the desired initial state of the memory cell;
- and
- controlling the identified parameter such that the initial state of the memory cell is the desired initial state.
A method for defining the initial state of a memory array comprising a plurality of memory cells, wherein each of the plurality of memory cells comprises a plurality of MOSFETs, and wherein the memory array is operative in conjunction with a device for storing program code and start-up data for execution by the device within the plurality of memory cells, the method comprising identifying a parameter of the plurality of MOSFETs that influences the initial state of the memory cell;
- determining the desired initial state of the memory cell;
- and
- stressing the plurality of MOSFETs beyond normal operating parameters to affect the identified parameter such that the initial state of the memory cell is the desired initial state.
A method for determining the initial state of a memory cell, wherein the memory cell comprises a plurality of transistors, the method comprising:
- identifying a physical parameter or operational characteristic of a transistor from among the plurality of transistors that influences the initial state;
- determining the desired initial state of the memory cell;
- and
- controlling the identified physical parameter or operational characteristic such that the initial state of the memory cell is the desired initial state.
Dependencies are inferred from the claim text.