Memory array employing single three-terminal non-volatile storage elements

A method of forming a non-volatile memory array, comprising the steps of:

• providing a plurality of memory cells, at least one memory cell comprising a three-terminal non-volatile storage element for storing a logical state of the at least one memory cell;
• and
• coupling the memory cells to a plurality of write lines, bit lines and word lines for selectively reading and writing the logical state of one or more memory cells in the memory array, the memory cells being operatively coupled to the write lines, bit lines and word lines so as to eliminate a need for a pass gate being coupled to a corresponding non-volatile storage element in the at least one memory cell.

A memory cell for use in a memory array including a plurality of bit lines, word lines and write lines, the memory cell comprising:

• a non-volatile storage element for storing a logical state of the memory cell, the non-volatile storage element including first, second and third terminals;
• wherein the first, second and third terminals of the non-volatile storage element are operatively coupled to a corresponding bit line, word line and write line, respectively, in the memory array so as to eliminate a need for a pass gate being coupled to the non-volatile storage element.