Reducing the effect of write disturbs in polymer memories
AssigneeIntel Corporation
InventorsRichard L. Coulson, Jonathan C. Lueker, Robert W. Faber
Life of this patent
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Abstract
The write disturb that occurs in polymer memories may be reduced by writing back data after a read in a fashion which offsets any effect on the polarity of bits in bit lines associated with the addressed bit. For example, each time the data is written back, its polarity may be alternately changed. In another embodiment, the polarity may be randomly changed.
Claims58
A method comprising:
- reading data from a polymer memory;
- writing the data back to the memory after reading the data;
- and
- changing the polarity of the data written back after reading the data.
A polymer memory comprising:
- a memory array;
- and
- a device to change the polarity of data written back after reading the data in the array.
A method comprising:
- writing data back to a polymer memory array;
- and
- periodically refreshing pixels in said polymer memory array.
An article comprising a medium storing instructions that, if executed, enable a processor-based system to:
- write data back to a polymer memory array;
- and
- periodically refreshing pixels in said polymer memory array.
A polymer memory comprising:
- a polymer memory array;
- and
- a device to periodically refresh pixels in said polymer memory array.
A system comprising:
- a digital signal processor;
- and
- a polymer memory coupled to said processor, said memory including an array including a plurality of pixels and a device to reduce the disturb voltage on at least one pixel.
Dependencies are inferred from the claim text.