Integrated semiconductor laser device and method of manufacture thereof

A method of forming a semiconductor device, comprising:

• depositing a plurality of semiconductor layers including an active layer over a semiconductor substrate over to form a plurality of integrated optical components, the integrated optical components including a buried heterojunction laser and a ridge waveguide, the ridge waveguide being optically coupled via the active layer to receive laser radiation generated by the laser;
• manufacturing the laser and ridge waveguide from the semiconductor layers by:
• i) forming at least one active layer;
• ii) forming a laser current conduction region that extends above the at least one active layer;
• iii) forming a laser current confinement region adjacent the active layer of the laser, the laser current conduction region and laser current confinement region being arranged to channel electric current to the active layer of the laser;
• and
• iv) forming an optically guiding ridge structure comprising one or more of the semiconductor layers that also form the laser current conduction region;
• wherein the laser current confinement region does not extend adjacent the ridge structure.