Microwave power sensor and method for manufacturing the same

Abstract

The present invention relates to a microwave power sensor and a method for manufacturing the same. The microwave power sensor comprises a semiconductor substrate with a nitride or oxide film formed thereon; a membrane which is a portion of the nitride or oxide film floated by removing a portion of the semiconductor substrate; first and second thermocouple groups formed to be symmetrically spaced apart from each other on the membrane; an RF input end formed on the nitride or oxide film; a heating resistor formed on the membrane to be connected with the RF input end; first and second ground plates formed on the nitride or oxide film at both sides of the RF input end; a third ground plate formed on the nitride or oxide film to be connected with the heating resistor and electrically connected with the first and second ground plates; and first and second output terminals formed on the semiconductor substrate to be connected with the first and second thermocouple groups, respectively. According to the present invention, the heating resistor is connected with the input end and the thermocouples are formed to be bilaterally symmetrical with respect to the heating resistor, so that it is easy to match impedance, an amount of reflection loss due to any parasitic components is small, and the linear output voltage proportional to the input electric power is obtained. Further, since the ground plates capable of radiating heat are formed to be spaced apart from and around the heating resistor, its thermal impedance becomes higher. Thus, there is an advantage in that the sensitivity of the sensor can be enhanced.

Dependencies are inferred from the claim text.