Semiconductor laser device and method for producing the same
AssigneeSharp Kabushiki Kaisha
InventorMasanori Watanabe
Life of this patent
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Abstract
A semiconductor laser device has a current injection region (A) and current non-injection regions (B) located closer to respective laser beam-emitting end faces than the current injection region is. The semiconductor laser device has an oxide layer (106A) formed at a surface of a p-type (AlpGa1-p)qIn1-qP (0≦p≦x, 0≦q≦1) intermediate band gap layer (106) in each of the current non-injection regions (B), a p-type GaAs cap layer (107) formed on the intermediate band gap layer (106) in the current injection region (A), and a p-type GaAs contact layer (125) formed on the oxide layer (106A) and the p-type GaAs cap layer (107).
Claims16
A semiconductor laser device wherein an n-type (AleGa1-e)fIn1-fP (0≦e≦1, 0≦f≦1) cladding layer, an active layer comprising a plurality of stacked layers of AlGaInP type material, a p-type (AlxGa1-x)yIn1-yP (0≦x≦1, 0≦y≦1) cladding layer, and a p-type (AlpGa1-p)qIn1-qP (0≦p≦x, 0≦q≦1) intermediate band gap layer are stacked in this order on a substrate, the semiconductor laser device having a current injection region and a current non-injection region,
- wherein the semiconductor laser device further comprises:
- an oxide layer formed on a surface of the p-type (AlpGa1-p)qIn1-qP intermediate band gap layer in the current non-injection region;
- a p-type AluGa1-uAs (0≦u≦1) cap layer formed on the p-type (AlpGa1-p)qIn1-qP intermediate band gap layer in the current injection region;
- and
- a p-type AlvGa1-vAs (0≦v≦1) contact layer formed on the oxide layer and the p-type AluGa1-uAs cap layer.
Dependencies are inferred from the claim text.