Back to results
US 2004/0057355 A1Published application
Variable level memory
AssigneeIntel Corporation
InventorsJohn C. Rudelic, Richard E. Fackenthal
Life of this patent
Estimating the term…
Abstract
There exists a tradeoff between the fidelity of data storage and the number of bits stored in a memory cell. The number of bits may be increased per cell when fidelity is less important. The number of bits per cell may be decreased when fidelity is more important. A memory, in some embodiments, may change between storage modes on a cell by cell basis.
Claims20
A method comprising:
- storing data at a first density in a first cell in a first memory;
- and
- storing data at a second density in a second cell in the first memory.
An article comprising a medium storing instructions that enable a processor-based system to:
- store data at a first density in a first cell in a first memory;
- and
- store data at a second density in a second cell in said first memory.
A memory comprising:
- a memory array including a first and second cell;
- and
- a controller coupled to said array to store data in said array at a first density in the first cell and to store data at a second density in the second cell.
Dependencies are inferred from the claim text.