Back to results
US 2004/0057193 A1Published application
Element Storage Layer in Integrated Circuits
AssigneesMr. Bum Ki Moon, Mr. Gerhard Beitel
InventorsBum Ki Moon, Gerhard Beitel
Life of this patent
Estimating the term…
Abstract
Reduced degradation to capacitor properties is disclosed. A hydrogen storage layer is provided over at least a portion a top capacitor electrode. The hydrogen storage layer absorbs and stores hydrogen, preventing hydrogen from diffusing to the capacitor. The hydrogen storage layer comprises, for example, lanthium nitride, titanium zirconium nitride, amorphous sm—co, nanostructured carbon, or a combination thereof.
Claims33
a capacitor structure comprising:
- top and bottom electrodes;
- a capacitor dielectric disposed between top and bottom electrodes;
- and
- an element storage layer covering and electrically coupled to the top electrode, the element storage layer absorbing or storing element harmful to the capacitor.
1 more element
A method of forming a capacitor comprising:
- providing a substrate prepared with a capacitor having top and bottom electrodes and a capacitor dielectric disposed between the electrodes;
- and
- forming an element storage layer covering at least a portion of the top electrode sufficient to accommodate a contact for coupling to the top capacitor electrode, the element storage layer comprises a material which absorbs or stores elements harmful to the capacitor.
Dependencies are inferred from the claim text.