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US 2004/0056705 A1Published application
Enhanced conductivity body biased PMOS driver
OwnerSanjay Dabralinventor
Life of this patent
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Abstract
According to one embodiment of the present invention a method for biasing a body of a transistor. The method includes detecting a voltage applied to a terminal of a transistor and coupling a biasing voltage to the body based upon the detected voltage.
Claims30
A method for biasing a body of a transistor, the method comprising:
- detecting a voltage applied to a terminal of a transistor;
- and
- coupling a biasing voltage to the body based upon the detected voltage.
A circuit, comprising:
- a transistor having a first terminal and a body;
- a voltage detector that is to detect a terminal voltage that is to be applied to the first terminal of the transistor and that is to apply a bias voltage to the body of the transistor based upon the detected terminal voltage.
A semiconductor circuit, comprising:
- a power supply node that is to provide a supply voltage;
- at least one field effect transistor having a source, a body, and a gate electrically coupled in a direct current manner to the body;
- and
- the source coupled to the power supply node
1 more element
A semiconductor circuit, comprising:
- a power supply node that is to provide a supply voltage;
- a first current source;
- at least one field effect transistor having a source, a body coupled to the first current source;
- and the source coupled to the power supply node.
1 more element
A method for biasing a body of a transistor, the method comprising:
- selecting one of two voltages to be applied to a terminal of a transistor;
- and
- coupling a biasing voltage to the body based upon the selected voltage.
Dependencies are inferred from the claim text.