US 2004/0056366 A1 · A METHOD OF FORMING SURFACE ALTERATION OF METAL INTERCONNECT IN INTEGRATED CIRCUITS FOR ELECTROMIGRATION AND ADHESION IMPROVEMENT

Abstract

Described is a method and apparatus for altering the top surface of a metal interconnect. In one embodiment of the invention, a metal interconnect and a barrier layer are formed into an interlayer dielectric (ILD) and the metal interconnect and the barrier layer are planarized to the top of the ILD. The top surfaces of the metal interconnect, the barrier layer, and the ILD are altered with a second metal to form an electromigration barrier. In one embodiment of the invention, the second metal is prevented from contaminating the electrical resistivity of the metal interconnect.

Claims30

Dependent claims

A method, comprising:

forming a metal interconnect in an interlayer dielectric (ILD), the metal interconnect couched in a barrier layer, the top of the metal interconnect and the top of the barrier layer planarized to the top of the ILD, and the metal interconnect comprising a first metal;
and
altering the top surfaces of the interconnect, barrier layer and ILD with a second metal to form an electromigration barrier to significantly prevent electromigration at the top surface of the interconnect.

Dependencies are inferred from the claim text.

Facts

Application

10/255,416Filed 25 Sep 2002

Published

25 Mar 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification21 codes

H10W 20/035
In openings in dielectrics: combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
H10P 14/412
Of conductive or resistive materials: deposition of metallic or metal-silicide materials
H10W 20/037
In openings in dielectrics: the barrier, adhesion or liner layers being on top of a main fill metal
H10W 20/047
Of conductive barrier, adhesion or liner layers: by introducing additional elements therein

A method of forming surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvement

Life of this patent

A method of forming surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvement

Life of this patent

Abstract

Claims30