Nitride semiconductor light emitting element chip and device including it

(Amended) A nitride semiconductor laser chip, comprising:

• a mask substrate including a mask group formed on a region of a main surface of a nitride semiconductor substrate (101) having a polarity of n type or p type,
• said mask group including a plurality of masks (200) and a plurality of windows arranged alternately, each said mask being formed of a growth inhibiting film suppressing epitaxial growth of a nitride semiconductor layer thereon, and each said window being unprovided with said growth inhibiting film;
• a nitride semiconductor underlayer (102) having a polarity and covering the entire region of said mask substrate including said mask group;
• and
• a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103-105) and a p type layer (107-110) over said underlayer,
• a current-constricting portion (RS) being formed above said mask group, as a region through which substantial electric current is introduced into said light emitting layer,
• electrodes (111, 112) being formed on a back side of said mask substrate and a front side of said light emitting device structure, respectively, and a width (MGW) of said mask group being narrower than a width (CW) of the laser chip in a direction orthogonal to a length direction of a laser resonator.