US 2004/0019871 A1 · Method for estimating remaining film thickness distribution, method for designing patterning mask using the method for estimating remaining film thickness distribution, and method for manufacturing semiconductor devices by using patterning mask designed by using the method for estimating remaining film thickness distribution

Abstract

A method for estimating relative remaining film thickness distribution (CMP pattern ratio distribution) among sparse and dense active regions after CMP on the basis of the layout of a mask pattern in a one-chip mask region. In each mask pattern, a reduced region is created by removing an area of a predetermined width from the mask pattern along the edge of the mask pattern. Then, the one-chip mask region is segmentalized into predetermined regions to create a plurality of segmentalized regions. On each of the segmentalized regions, the area ratio of all reduced regions occupying a region that includes a segmentalized region at a fixed position and has the same size and shape as those of the foregoing one-chip mask region is acquired. Based on the acquired area ratio, the distribution of remaining film thickness of a surface protection film in the one-chip mask region, i.e., the CMP pattern ratio, is acquired.

Claims9

Dependent claims

A method for estimating remaining film thickness distribution of a surface protection film that remains on each activation region after chemical mechanical polishing when a semiconductor substrate having the surface protection film is etched using a patterning mask that has a mask pattern for producing an activation region to form a device isolation trench so as to create the activation region, an insulating film is provided over the activation region to fill the device isolation trench, and chemical mechanical polishing is performed on the semiconductor substrate with the insulating film provided thereon to form a device separating portion,

the patterning mask comprising a plurality of one-chip mask regions arranged in matrix, and each of the one-chip mask regions comprising the same number of the mask patterns in the same layout,
the method for estimating remaining film thickness distribution comprising:
a step for generating a reduced region on each of the mask patterns by removing a predetermined width from the mask pattern along the edge of the mask pattern;
a step for segmentalizing the one-chip mask region into predetermined segmentalized regions to generate segmentalized regions and for acquiring an area ratio of all reduced regions with respect to each of the segmentalized regions, the all reduced regions occupying a region that includes the segmentalized region at a fixed position and has the same size and shape as those of the one-chip mask region;
and
a step for acquiring the distribution of the remaining film thickness in the one-chip mask region on the basis of the area ratio.

3 more elements

A method for estimating remaining film thickness distribution of a surface protection film that remains on each activation region after chemical mechanical polishing when a semiconductor substrate having the surface protection film is etched using a patterning mask that has a mask pattern for forming an activation region to form a device isolation trench so as to create the activation region, an insulating film is provided over the activation region to fill the device isolation trench, and chemical mechanical polishing is performed on the semiconductor substrate with the insulating film provided thereon to form a device separating portion,

the patterning mask comprising a plurality of one-chip mask regions arranged in-matrix, and each of the one-chip mask regions comprising the same number of the mask patterns in the same layout,
the method for estimating remaining film thickness distribution comprising:
a step for generating a reduced region for each of the mask patterns by removing a predetermined width from each mask pattern along the edge of the mask pattern;
a step for generating a frame-shaped region by removing, from the mask pattern, a regional portion that overlaps the reduced region corresponding to the mask pattern;
a step for segmentalizing the one-chip mask region into predetermined segmentalized regions to generate segmentalized region and for acquiring an area ratios of all reduced regions and frame-shaped regions, respectively, with respect to each of the segmentalized region, the reduced regions and frame-shaped regions occupying a region that includes the segmentalized region at a fixed position and has the same size and shape as those of the one-chip mask region in each of the segmentalized regions;
and
a step for-acquiring the distribution of the remaining film thickness in the one-chip mask region on the basis of the area ratio of the reduced regions and the area ratio of the frame-shaped regions.

4 more elements

Dependencies are inferred from the claim text.

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Life of this patent

Abstract

Claims9