Conductive contact structure and process
AssigneeWinbond Electronics Corp.
InventorsShih-Hsien Yang, Yueh-Cheng Chuang, Bor-Ru Sheu
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Abstract
A conductive contact structure to electrically connect to a source/drain region in a semiconductor substrate and a process of making the same are described. An inlay opening including a pad opening and a bottom opening is formed in the dielectric layer on the semiconductor substrate. The pad opening is larger than and located upon the bottom opening that exposing the source/drain region. The bottom opening and pad opening are sequentially filled with a polysilicon layer and a tungsten layer to form a bottom plug and a metal pad layer, respectively.
Claims20
A method of fabricating a conductive contact structure for electrically connecting to a source/drain region in a semiconductor substrate having a first dielectric layer thereon covering said source/drain region, comprising the steps of:
- forming a pad opening and a bottom opening in said first dielectric layer, said pad opening being larger than and located upon said bottom opening which exposing said source/drain region;
- forming a polysilicon layer to fill said bottom opening;
- forming a first metal layer to fill said pad opening;
- forming a second dielectric layer on said first dielectric layer;
- forming a top opening in said second dielectric layer, said top opening being smaller than and located upon said pad opening, said top opening being substantially shifting away from said bottom opening;
- and
- forming a second metal layer to fill said top opening.
A conductive contact structure in a dielectric layer located on a semiconductor substrate to electrically connect to a source/drain region in said semiconductor substrate, comprising:
- a bottom plug disposed on and electrically connected to said source/drain region;
- a metal pad layer disposed on said bottom plug being larger than said bottom plug and electrically connected to said bottom plug;
- and
- a top plug disposed on and electrically connected to said metal pad layer and said top plug being substantially shifted away from said bottom plug.
A conductive contact structure in a dielectric layer located on a semiconductor substrate to electrically connect to a conductive region in said semiconductor substrate, comprising:
- a bottom plug disposed on and electrically connected to said conductive region;
- a metal pad layer disposed on said bottom plug being larger than said bottom plug and electrically connected to said bottom plug.
Dependencies are inferred from the claim text.