Method and structure of interconnection with anti-reflection coating

Abstract

A method and structure for interconnection fabrication by using dielectric anti-reflection coating to improve the photolithographic process. The device's structure comprises a substrate with a Cu or Cu-based alloy formed therein. After planarizing the device, a thin barrier dielectric layer is formed on the substrate. A dielectric anti-reflection coating (DARC) layer is then formed on the barrier dielectric layer. Next, another inter-layer dielectric is formed on the anti-reflective coating layer and a subsequent photoresist layer is formed on the inter-reflection coating layer and patterned by using the underlying DARC layer to reduce the light reflection. By using the structure and method of the present invention, it is possible to decrease the process steps and increase the precision of the photolithographic process.

Dependencies are inferred from the claim text.