Method of manufacturing a device
AssigneeInficon GmbH
InventorGuenther Nicolussi
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a device includes activating a gas containing at least one of hydrogen and of nitrogen by a hollow cathode discharge and exposing a first surface of a first material to the activated gas, thereby generating at the first surface an enrichment of at least one of hydrogen and of nitrogen and applying a further treatment to the enriched surface.
Claims47
A method of manufacturing a device comprising
- activating a gas containing at least one of hydrogen and of nitrogen by a hollow cathode discharge;
- exposing a first surface of a first material to said activated gas, thereby
- generating at said first surface an enrichment of at least one of hydrogen and of nitrogen
- applying a further treatment to said enriched surface.
A method of manufacturing a device comprising
- a) switching on at least one plasma beam generated by a hollow cathode discharge in a gas atmosphere;
- b) introducing at least one part of a device into said atmosphere;
- c) treating said part in said atmosphere;
- d) switching off said discharge;
- e) repeating steps (a) to (d) at least twice.
A method of manufacturing a device comprising intermittently operating a hollow cathode discharge and thereby treating at least one device.
A vacuum treatment system comprising a vacuum recipient, at least one hollow cathode and anode arrangement generating within said recipient at least one plasma beam and a substrate carrier within said vacuum recipient, said hollow cathode/anode arrangement being electrically fed by an electrical signal generator operationally connected to said hollow cathode/anode arrangement via an intermittently operated enabling/disabling arrangement
Dependencies are inferred from the claim text.