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US 2004/0016973 A1Published application
Gate dielectric and method
AssigneeTexas Instruments Incorporated
InventorsAntonio L.P. Rotondaro, Luigi Colombo, Douglas E. Mercer
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Abstract
CMOS gate dielectric made of high-k metal silicates by reaction of metal with silicon dioxide at the silicon surface. Optionally, a silicon dioxide monolayer may be preserved at the interface.
Claims13
A method of fabrication of field effect devices, comprising the steps of:
- (a) forming a first layer of silicon oxide on a silicon surface;
- (b) depositing a second layer of silicate precursor material on said first layer;
- (c) reacting said second layer material with said first layer silicon oxide to form a third layer of a silicate material;
- (d) forming gates on said third layer.
1 more element
A method of fabrication of field effect devices, comprising the steps of:
- (a) forming a first layer of silicon oxide on a silicon surface;
- (b) depositing a second layer of silicate precursor material on said first layer;
- (c) reacting said second layer material with said first layer material to form a third layer of a silicate material;
- (d) depositing a fourth layer of dielectric material on said third layer;
- and
- (e) forming gates on said fourth layer.
3 more elements
A method of fabrication of field effect devices, comprising the steps of:
- (a) forming a first layer of silicon oxide on a silicon surface;
- (b) depositing a second layer of silicate precursor material on said first layer;
- (c) depositing a third layer of dielectric material on said second layer;
- (d) annealing to react said second layer material with said first layer silicon oxide to form a third layer of a silicate material;
- and
- (e) forming gates on said third layer.
3 more elements
An integrated circuit, comprising:
- (a) a substrate with field effect devices;
- (b) wherein said devices have gate dielectric layers including a first sublayer of an in situ reaction product of silicon oxide and a second sublayer of a deposited high-k material.
Dependencies are inferred from the claim text.