Diode and producing method thereof

A diode comprising:

• a semiconductor substrate of either of first or second conductivity type;
• first and second stripe diffusion regions which are of said first conductivity type and a second conductivity type, respectively, alternately arranged at a regular interval in a surface portion of said semiconductor substrate, longitudinal sides of said first and second stripe diffusion regions being arranged so as to face each other;
• first and second stripe electrodes formed above said first and second diffusion regions along said longitudinal sides, connected to said first and second diffusion regions, respectively;
• and
• first and second lead wire electrodes having widths which are shorter than longitudinal sides of said first and second stripe electrodes, connected to said first and second stripe electrodes expect at first and second ends of said first and second stripe electrodes, respectively.

A diode comprising:

• a substrate of a first conductivity type;
• first and second stripe diffusion regions which are said first conductivity type and a second conductivity type, respectively, alternately arranged at a regular interval in a surface layer of said semiconductor substrate, longitudinal sides of said first and second stripe diffusion regions being arranged so as to face each other;
• first and second stripe electrodes above said first and second diffusion regions along said longitudinal sides, connected to said first and second diffusion regions, respectively;
• and
• surge current concentration suppressing means for suppressing concentration of surge current at neighboring ends of said first and second stripe diffusion regions.

A diode comprising:

• a semiconductor substrate;
• an insulation protection film on said semiconductor substrate having three openings arranged in a predetermined direction, said three openings being spaced by two bridge portions having the same width in said predetermined direction;
• a first impurity diffusion region of a first conductivity type disposed in a surface layer of said semiconductor substrate under center one of said three openings;
• second impurity diffusion regions of a second conductivity type disposed in said surface layer under outer two of said openings, respectively;
• first and second PN junction regions in said surface layer between said first impurity diffusion region and said second impurity diffusion regions, said first and second PN junction regions being covered with said bridge portions and having PN junction widths depending on said bridge portions, said insulation protection film having a melting point higher than the PN junction regions;
• a first electrode on said insulation protection film connecting to said first impurity diffusion region through said opening;
• and
• a second electrode on said insulation protection film connecting said second impurity diffusion regions through said openings.

A diode comprising:

• a semiconductor substrate;
• an insulation protection film on said semiconductor substrate having m sets of three openings, each set of three openings being arranged in a predetermined direction, said three openings being spaced by two bridge portions having the same width in said predetermined direction;
• m first impurity diffusion regions of a first conductivity type in a surface layer of said semiconductor substrate under center one of said three openings of each set;
• 2m second impurity diffusion regions of a second conductivity type in said surface layer under outer two of said openings of each set, respectively;
• m sets of first and second PN junction regions in said surface layer, each set of said first and second PN junction regions are arranged between said first impurity diffusion region and said second impurity diffusion regions at both sides thereof, said first and second PN junction regions being covered with said bridge portions and having PN junction widths depending on said bridge portions, said insulation protection film having a melting point higher than the PN junction regions;
• a first electrode on said insulation protection film connecting said m first impurity diffusion regions through said openings;
• and
• a second electrode on said insulation protection film connecting said 2m second impurity diffusion regions through said openings,
• wherein m is a natural number more than one.

A diode comprising:

• a semiconductor substrate;
• an insulation protection film on said semiconductor substrate having n+1 openings arranged in a predetermined direction, said n+1 openings being spaced by n bridge portions having the same width in said predetermined direction, said n being a natural number more than one;
• first and second impurity diffusion regions which are of first and second conductivity types, respectively, alternately arranged in a surface layer of said semiconductor substrate under said n+1 openings;
• n PN junction regions having the same width under said n bridge portions in said surface layer between said first and second impurity diffusion regions, said n PN junction regions being covered with said n bridge portions and having the PN junction widths depending on said n bridge portions, said insulation protection film having a melting point higher than the PN junction regions;
• a first electrode on said insulation protection film connecting said first impurity diffusion regions;
• and
• a second electrode on said insulation protection film connecting said second impurity diffusion regions.

A method of producing a diode comprising the steps of:

• forming an insulation protection film on a semiconductor substrate;
• forming three openings in said insulation protection film arranged in a predetermined direction, said three openings being spaced by two bridge portions of said insulation, protection film having the same width in said predetermined direction;
• ion-injecting first impurity into a surface layer of said semiconductor substrate through center one of said three openings to form a first impurity diffusion region of a first conductivity type;
• ion-injecting second impurity into said surface layer through outer two of said openings to form two second impurity diffusion regions of a second conductivity type;
• and
• forming first and second electrodes on said insulation protection film for connecting to said first diffusion region and for connecting said second diffusion regions, respectively.

A method of producing a diode comprising the steps of:

• forming an insulation protection film on a semiconductor substrate;
• forming m sets of three openings in said insulation protection film, each set of three openings being arranged in a predetermined direction, said three openings being spaced by two bridge portions of said insulation protection film having the same width in said predetermined direction;
• ion-injecting first impurity into a surface layer of said semiconductor substrate through center one of said three openings of each set to form m first impurity diffusion regions of a first conductivity type;
• ion-injecting second impurity into said surface layer through outer two of said openings of each set to form 2m second impurity diffusion regions of a second conductivity type;
• forming a first electrode on said insulation protection film connecting said m first impurity diffusion regions;
• and
• forming a second electrode on said insulation protection film connecting said 2m second impurity diffusion regions,
• wherein m is a natural number more than one.

A method of producing a diode comprising the steps of:

• forming an insulation protection film on a semiconductor substrate having n+1 openings arranged in a predetermined direction, said n+1 openings being spaced by n bridge portions having the same width in said direction, said n being a natural number more than one;
• ion-injecting first and second impurity into a surface layer of said semiconductor substrate through said openings to form first and second impurity diffusion regions of first and second conductivity type, respectively, to be alternately arranged in a surface layer of said semiconductor substrate under said n+1 openings;
• and
• forming a first electrode on said insulation protection film connecting said first impurity diffusion regions;
• and
• forming a second electrode on said insulation protection film connecting said second impurity diffusion regions.