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OwnerAkira Sekiya, Yuki Mitsui +2inventors
InventorsAkira Sekiya, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura
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The plasma cleaning gas for CVD chamber according to the present invention is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas comprises 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, the extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the appatratus is not complicated and thereby the cleaning gas has excellent practicability.
A plasma cleaning gas for CVD chambers which gas comprises 100% by volume of fluorine gas capable of generating plasma by electric discharge and is used for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by means of a plasma CVD apparatus.
A process of plasma cleaning for CVD chambers which process comprises cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber by plasma generated from 100% by volume of fluorine gas by electric discharge, after film forming treatment on a substrate by means of a plasma CVD apparatus.
A plasma cleaning gas for CVD chambers which gas comprises fluorine gas capable of generating plasma by electric discharge and a gas substantially incapable of reacting with fluorine in plasma, and is used for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus.
A process of plasma cleaning for CVD chambers which process comprises cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber by plasma generated from fluorine gas by electric discharge using a plasma cleaning gas for CVD chambers comprising fluorine gas capable of generating plasma by electric discharge and a gas substantially incapable of reacting with fluorine in plasma, after film forming treatment on a substrate by means of a plasma CVD apparatus.
Dependencies are inferred from the claim text.