Atomic layer deposition methods

An atomic layer deposition method, comprising:

• positioning a semiconductor substrate within an atomic layer deposition chamber;
• flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate;
• after forming the first monolayer, flowing a reactive intermediate gas to the substrate within the deposition chamber, the reactive intermediate gas being capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing and not being capable of reaction with the first monolayer under said conditions;
• and
• after flowing the reactive intermediate gas, flowing a second precursor gas different in composition from the first precursor gas to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer.

An atomic layer deposition method, comprising:

• positioning a semiconductor substrate within an atomic layer deposition chamber;
• flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate;
• after forming the first monolayer, flowing a reactive intermediate gas to the substrate within the deposition chamber, the reactive intermediate gas being capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing;
• after flowing the reactive intermediate gas, flowing an inert purge gas to the substrate within the deposition chamber;
• and
• after flowing the inert purge gas, flowing a second precursor gas to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer.

An atomic layer deposition method, comprising:

• positioning a semiconductor substrate within an atomic layer deposition chamber;
• flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate;
• after forming the first monolayer, flowing an inert purge gas to the substrate within the deposition chamber;
• after flowing the reactive intermediate gas, flowing a reactive intermediate gas to the substrate within the deposition chamber, the reactive intermediate gas being capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing;
• and
• after flowing the inert purge gas, flowing a second precursor gas to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer.

An atomic layer deposition method, comprising:

• positioning a semiconductor substrate within an atomic layer deposition chamber;
• flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate;
• after forming the first monolayer, flowing a plurality of inert purge gas pulses to the substrate within the deposition chamber, the plurality of inert purge gas pulses comprising at least some period of time between at least two adjacent inert purge gas pulses when no gas is fed to the chamber;
• and
• after said plurality of inert purge gas pulses, flowing a second precursor gas to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer.