US 2004/0005845 A1 · Polishing method and apparatus

Abstract

A chemical mechanical polishing method for polishing an oxide film and a protective film formed on a substrate having recesses comprises four steps. The first step planarizes the oxide film using a polishing pad and a polishing agent containing cerium oxide particles by causing relative rotational motion between the substrate and the polishing pad. The second step continues polishing the oxide film to maintain the planarized property of the oxide film. The third step polishes the oxide film until at least a portion of the protective film becomes exposed. The fourth step polishes the oxide film until the oxide film is substantially removed and the protective film is substantially exposed. During the four steps, torque values are measured on the substrate or the polishing pad, and changes in torque with time are calculated. This information is used to determine the status of each of the steps during the polishing run.

Claims27

Dependent claims

A polishing method for chemical mechanical polishing of an oxide film adhered on a protective film formed on a substrate having recesses, the method comprising:

a first step of planarizing the oxide film by bringing the oxide film into contact with a polishing pad, supplying a polishing agent containing cerium oxide particles between the oxide film and the polishing pad, and causing relative rotational motion between the substrate and the polishing pad;
a second step of continuing to polish the oxide film once the oxide film has been planarized, thereby maintaining the planarized property of the oxide film;
a third step of continuing to polish the oxide film until at least a portion of the protective film becomes exposed;
a fourth step of continuing to polish the oxide film until the oxide film is substantially removed and the protective film is substantially exposed;
measuring torque values on the substrate or on the polishing pad either continuously or at intervals during the first through fourth steps;
and
calculating changes in torque with time to determine the status of each of the first through fourth steps concurrently with the polishing method.

4 more elements

A polishing device for chemically mechanically polishing an oxide film adhered on a protective film formed on a substrate having recesses, comprising:

a substrate holding section for holding the substrate;
a polishing section having a polishing pad disposed opposite the substrate holding section;
a driving mechanism for rotating the one or both of the substrate holding section and the polishing pad;
a polishing agent supplier for supplying polishing agent between the substrate and the polishing pad;
a water supplier for supplying water between the substrate and the polishing pad;
a torque measuring device for measuring torque values on the driving mechanism either continuously or at intervals;
and
a process monitoring device for monitoring the real-time status of a polishing run by calculating changes in torque with time using the measured torque values.

5 more elements

Dependencies are inferred from the claim text.

Polishing method and apparatus

Life of this patent

Polishing method and apparatus

Life of this patent

Abstract

Claims27