Back to results
US 2004/0005789 A1Published application
Method for fabricating semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsNobuhiro Jiwari, Shinichi Imai
Life of this patent
Estimating the term…
Abstract
A fluorine-containing organic film having a relative dielectric constant of 4 or less is deposited on a semiconductor substrate using a material gas containing C5F8, C3F6, or C4F6 as a main component.
Claims10
A method for fabricating a semiconductor device, comprising the step of:
- depositing a fluorine-containing organic film having a relative dielectric constant of 4 or less on a semiconductor substrate using a material gas containing C4F6 as a main component.
A method for fabricating a semiconductor device, comprising the steps of:
- dry-etching an insulating film on a semiconductor substrate using an etching gas containing C4F6 as a main component;
- and
- depositing a fluorine-containing organic film having a relative dielectric constant of 4 or less on the semiconductor substrate using a material gas containing C4F6 as a main component,
- wherein the step of dry-etching an insulating film and the step of depositing a fluorine-containing organic film are performed in a same plasma processing apparatus.
1 more element
A method for fabricating a semiconductor device comprising the steps of:
- depositing a metal film on a semiconductor substrate;
- forming a mask pattern made of a resist film or an insulating film on the metal film;
- dry-etching the metal film using the mask pattern to form a plurality of metal interconnections made of the metal film;
- and
- depositing a fluorine-containing organic film having a relative dielectric constant of 4 or less as an interlayer insulating film between the plurality of metal interconnections and on top surfaces of the metal interconnections using a material gas containing C4F6 as a main component.
2 more elements
Dependencies are inferred from the claim text.