Back to results
US 2004/0005785 A1Published application
Atmospheric process and system for controlled and rapid removal of polymers from high depth to width aspect ratio holes
AssigneeJetek, Inc.
InventorsLynn David Bollinger, Iskander Tokmouline
Life of this patent
Estimating the term…
Abstract
A hot arc-type plasma generating system is described to etch a polymer on a substrate used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes, that can include trenches, greater than about 10 to 1 and even greater than 50 to 1.
Claims13
A method for removing a polymer from a substrate having high aspect ratio holes having a depth to width aspect ratio of greater that 10:1, comprising the step of:
- generating a hot gas stream and directing the stream at the substrate for a time period and with a sufficient number of passes to remove the polymer from the holes to a desired depth.
A method for removing a polymer from a substrate having high depth to width aspect ratio holes, comprising the steps of:
- directing an atmospheric plasma hot gas having a heat flux in the range from 106 to 107 W/m2 for a controlled rapid removal of a polymer from a high depth to width ratio hole in the substrate and varying the exposure time of the substrate to the hot gas to obtain a uniform net removal of polymer material from high depth to width aspect ratio holes in the substrate.
Dependencies are inferred from the claim text.