Spin electronic material and fabrication method thereof

A spin electronic material exhibiting a spin-dependent electronic effect, which material comprises zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb, and a zincblende Group III-V semiconductor of GaAs, AlAs, InAs, GaSb, AlSb or a mixed crystal thereof.

A spin electronic material exhibiting a spin-dependent electronic effect and enabling control of degree of spin polarization, intensity and anisotropy of magnetism, and ferromagnetic transition temperature, which material comprises a mixed crystal of TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb, and a different zincblende TE*-VE* represented by TE1−xTE*x-VE1−yVE*y (where 0<x<1, 0<y<1, TE* is V, Cr or Mn and different from TE, and VE* is As or Sb and different from VE).

A spin electronic material exhibiting a spin-dependent electronic effect and enabling control of degree of spin polarization, intensity and anisotropy of magnetism, and ferromagnetic transition temperature, which material comprises multilayers of zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb, and a zincblende Group III-V semiconductor of GaAs, AlAs, InAs, GaSb, InSb or a mixed crystal thereof represented by {[TE-VE]×d1/[III-V]×d2}×N (where [III-V] stands for zincblende Group III-V semiconductor, d1 for thickness of the zincblende TE-VE, d2 for thickness of the semiconductor and N for repetition period).

A method of fabricating a spin electronic material exhibiting a spin-dependent electronic effect comprising the steps of:

• retaining a substrate of zincblende semiconductor electronic material at a temperature not exceeding 400° C.;
• and
• using a non-thermal equilibrium gas phase growth process to deposit TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb, simultaneously on the substrate.