Method for depositing an adhesion/barrier layer to improve adhesion and contact resistance

A method for forming a titanium/titanium nitride adhesion/barrier liner to improve adhesion and a specific contact resistance of a via to an underlying conductive surface comprising the steps of:

• providing a semiconductor wafer having a process surface including at least one via opening extending through at least one dielectric insulating layer and in closed communication with a conductive underlayer surface;
• pre-heating the semiconductor wafer in a plasma reactor to a pre-heating temperature of at least 400° C.;
• cleaning the at least one via opening according to a plasma assisted reactive pre-cleaning process (RPC) including supplying nitrogen trifluoride gas to maintain the plasma;
• blanket depositing a titanium layer according to a plasma assisted PVD process;
• and,
• blanket depositing a titanium nitride layer according to a plasma assisted CVD process.