Method of forming an isolation layer in a semiconductor devices
AssigneeHynix Semiconductor Inc.
InventorCha Deok Dong
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Abstract
A method of forming an isolation layer in the semiconductor devices is disclosed. The present invention comprises forming the isolating film by means of a method in which a method of forming a V type trench at the isolation region, implanting ions capable of accelerating oxidization action into the center portion of the V type trench, implementing an oxidization process to form an insulating film consisting of an oxide film at the isolation region, and then completely burying the trench with an insulating material, using the LOCOS method, and a method of forming a trench type isolation layer, are applied together. Therefore, as the top corner of the trench is formed with inclination, concentration of the electric field and formation of a moat can be simultaneously prevented.
Claims7
A method of forming an isolation layer in a semiconductor device, comprising the steps of:
- sequentially forming a tunnel oxide film and a pad nitride film on a semiconductor substrate and then forming an aperture through which an isolation region of the semiconductor substrate is exposed;
- forming a V type trench at the isolation region;
- forming an insulating film spacer at the sidewall of the pad nitride film in the aperture;
- forming an ion implantation layer for accelerating oxidization at the bottom of the V type trench that is exposed through the aperture;
- forming a first insulating film at the V type trench by means of an oxidization process;
- burying the aperture on the first insulating film with a second insulating film;
- and
- removing the pad nitride film and the pad oxide film.
Dependencies are inferred from the claim text.