Method of manufacturing low-leakage, high-performance device
AssigneeUnited Microelectronics Corp.
InventorsHua-Chou Tseng, Tony Lin
Life of this patent
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Abstract
A method of manufacturing a low-leakage, high-performance device. A substrate having a gate electrode thereon is provided. A lightly doped, high-energy implantation is conducted to form a lightly doped source/drain terminal in the substrate. An offset spacer is formed on each sidewall of the gate electrode. A heavily doped implantation is conducted to form a heavily doped source/drain terminal in the substrate. The heavily doped source/drain terminal has a depth smaller than the lightly doped source/drain terminal. A protective spacer structure is formed on each sidewall of the gate electrode. A deep-penetration source/drain implantation is carried out to form a deep source/drain terminal in the substrate.
Claims19
A method of forming a low-leakage, high-performance device, comprising the steps of:
- providing a substrate having a gate electrode thereon;
- performing a lightly doped drain implantation to form a lightly doped source/drain terminal having a first depth in the substrate on each side of the gate electrode;
- forming an offset spacer on each sidewall of the gate electrode;
- performing a heavily doped implantation to form a heavy doped source/drain terminal having a second depth in the substrate;
- forming a spacer structure on each sidewall of the gate electrode and over the substrate;
- and
- performing a deep-penetrating source/drain implantation to form a source/drain terminal in the substrate.
A method of forming a low-leakage, high-performance device, comprising the steps of:
- providing a substrate having a gate electrode thereon;
- performing a lightly doped drain implantation to form a lightly doped source/drain terminal having a first depth in the substrate;
- forming an offset spacer on each sidewall of the gate electrode;
- performing a heavily doped implantation to form a heavy doped source/drain terminal having a second depth in the substrate, wherein the first depth is greater than the second depth;
- forming a spacer structure on each sidewall of the gate electrode and over the substrate;
- and
- performing a deep-penetrating source/drain implantation to form a source/drain terminal in the substrate.
Dependencies are inferred from the claim text.