Semiconductor device and method of forming the same
AssigneeNEC Electronics Corporation
InventorHiroyuki Kitamura
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Abstract
The present invention provides a cylindrically shaped stack electrode having a lamination structure which comprises a cylindrically shaped outer layer and a cylindrically shaped inner layer laminated on an inner wall of said cylindrically shaped outer layer, wherein hemispherical grains are formed on an inner wall of said cylindrically shaped inner layer. The cylindrically shaped stack electrode has the lamination structure of a plurality of layers.
Claims16
A cylindrically shaped stack electrode having a lamination structure which comprises a cylindrically shaped outer layer and a cylindrically shaped inner layer laminated on an inner wall of said cylindrically shaped outer layer, wherein hemispherical grains are formed on an inner wall of said cylindrically shaped inner layer.
A stacked capacitor which comprises a cylindrically shaped stack electrode, a capacitive insulation film and a surface side opposite electrode, wherein the cylindrically shaped stack electrode has a lamination structure which comprises a cylindrically shaped outer layer and a cylindrically shaped inner layer laminated on an inner wall of said cylindrically shaped outer layer, wherein hemispherical grains are formed on an inner wall of said cylindrically shaped inner layer.
A method of forming a cylindrically shaped stack electrode having a lamination structure, the method comprising the steps of:
- forming a cylindrically shaped outer layer;
- forming a cylindrically shaped inner layer laminated on an inner wall of the cylindrically shaped outer layer;
- and
- forming hemispherical grains on an inner wall of said cylindrically shaped inner layer.
A method of forming a stacked capacitor, comprising the steps of:
- forming a cylindrically shaped outer layer;
- forming a cylindrically shaped inner layer laminated on an inner wall of the cylindrically shaped outer layer;
- and
- forming hemispherical grains on an inner wall of the cylindrically shaped inner layer to form a cylindrically shaped stack electrode, forming a capacitive insulation film on a surface of the cylindrically shaped stack electrode, and forming a surface side opposite electrode on the capacitive insulation film.
Dependencies are inferred from the claim text.