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US 2004/0005748 A1Published application
Methods of forming a gate insulating layer in an integrated circuit device in which the gate insulating layer is nitrified and then annealed to cure defects caused by the nitridation process
OwnerSang-Jin Hyun, Sug-Hun Hong +3inventors
InventorsSang-Jin Hyun, Sug-Hun Hong, Yu-Gyun Shin, Jae-Yoon Yoo, Hyun-Duk Cho
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Abstract
A gate insulating layer in an integrated circuit device is formed by forming a gate insulating layer on a substrate. The gate insulating layer is nitrified with plasma and then annealed using oxygen radicals. The oxygen radicals may cure defects in the gate insulating layer caused by the nitridation process. As a result, leakage current may be reduced.
Claims12
A method of forming a gate insulating layer in an integrated circuit device, comprising:
- forming a gate insulating layer on a substrate;
- nitrifying the gate insulating layer with plasma;
- and
- annealing the nitrified gate insulating layer using oxygen radicals.
1 more element
A method of forming a gate insulating layer in an integrated circuit device, comprising:
- forming a gate insulating layer on a substrate;
- nitrifying the gate insulating layer with plasma;
- and
- annealing the nitrified gate insulating layer using oxygen radicals generated from at least one of N2O, O3, and NO2 at a pressure of about 3-50 Torr, at a temperature of about 700-1000° C., and for a period of about 10-60 seconds.
1 more element
Dependencies are inferred from the claim text.