Strained-semiconductor-on-insulator device structures

A structure comprising:

• a substrate having a dielectric layer disposed thereon;
• a strained semiconductor layer disposed in contact with the dielectric layer;
• and
• a transistor including
• a source region and a drain region disposed in a portion of the strained semiconductor layer, and
• a gate disposed above the strained semiconductor layer and between the source and drain regions, the gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound.

A structure comprising:

• a substrate having a dielectric layer disposed thereon;
• and
• a strained semiconductor layer disposed in contact with the dielectric layer,
• wherein the strained semiconductor layer comprises approximately 100% silicon and has a misfit dislocation density of less than about 105 cm/cm2.

A structure comprising:

• a substrate having a dielectric layer disposed thereon;
• and
• a strained semiconductor layer disposed in contact with the dielectric layer,
• wherein the strained semiconductor layer comprises approximately 100% silicon and has a threading dislocation density selected from the range of about 10 dislocations/cm2 to about 107 dislocations/cm2.

A structure comprising:

• a substrate having a dielectric layer disposed thereon;
• and
• a strained semiconductor layer disposed in contact with the dielectric layer,
• wherein the semiconductor layer comprises approximately 100% silicon and has a surface roughness selected from the range of approximately 0.01 nm to approximately 1 nm.

A structure comprising:

• a substrate having a dielectric layer disposed thereon;
• and
• a strained semiconductor layer disposed in contact with the dielectric layer,
• wherein the strained semiconductor layer comprises approximately 100% silicon and has a thickness uniformity across the substrate of better than approximately ±10%.

A structure comprising:

• a substrate having a dielectric layer disposed thereon;
• and
• a strained semiconductor layer disposed in contact with the dielectric layer,
• wherein the strained semiconductor layer comprises approximately 100% silicon and has a thickness of less than approximately 200 Å.

A structure comprising:

• a substrate having a dielectric layer disposed thereon;
• and
• a strained semiconductor layer disposed in contact with the dielectric layer,
• wherein the semiconductor layer comprises approximately 100% silicon and has a surface germanium concentration of less than approximately 1×1012 atoms/cm2.

A structure comprising:

• a substrate having a dielectric layer disposed thereon;
• and
• a strained semiconductor layer disposed in contact with the dielectric layer,
• wherein an interface between the strained semiconductor layer and the dielectric layer has a density of bonding voids of less than 0.3 voids/cm2.

A method for forming a structure, the method comprising:

• providing a first substrate comprising a porous layer defining a cleave plane and having a first strained semiconductor layer formed thereon;
• bonding the first strained semiconductor layer to an insulator layer disposed on a second substrate;
• and
• removing the first substrate from the first strained semiconductor layer by cleaving at the cleave plane, the strained semiconductor layer remaining bonded to the insulator layer.

A method for forming a structure, the method comprising:

• forming a first relaxed layer over a first substrate, wherein the first relaxed layer includes a porous layer defining a cleave plane;
• forming a strained semiconductor layer over the first relaxed layer;
• bonding the first strained semiconductor layer to an insulator layer disposed on a second substrate;
• and
• removing the first substrate from the strained semiconductor layer by cleaving at the cleave plane, the strained semiconductor layer remaining bonded to the insulator layer.